Źródło promieni rentgenowskich Microfocus
IGBT Defects Control Microfocus Źródło promieniowania rentgenowskiego zainstalowane na maszynie wykrywającej promieniowanie rentgenowskie
Chinese Factory X Ray Source for X Ray Inspection Machine to check IGBT Key Parameter: Max. Tube Power: 60W Max. Tube Voltage: 150kV Beam Angle: 110±3° Min. Spot Size: ≤7μm Applications: Integrated Circuit Package EV Battery SMT, PCBA ,Electronic Manufacturing IGBT Substrate / Module Specifications: Operating Tube Voltage Range 40-150 kV Operating Tube Current Range 0-400 μA Maximum Tube Power 60W Power Consumption ＜150W Input Voltage (DC) 48±0.5V Window Material/Thickness Be
Chińska fabryka źródło promieniowania rentgenowskiego do urządzenia do kontroli promieniowania rentgenowskiego IGBT
Chinese Factory X Ray Source for X Ray Inspection Machine to check IGBT Key Parameter: Max. Tube Power: 60W Max. Tube Voltage: 150kV Beam Angle: 110±3° Min. Spot Size: ≤7μm Applications: Integrated Circuit Package EV Battery SMT, PCBA ,Electronic Manufacturing IGBT Substrate / Module Specifications: Operating Tube Voltage Range 40-150 kV Operating Tube Current Range 0-400 μA Maximum Tube Power 60W Power Consumption ＜150W Input Voltage (DC) 48±0.5V Window Material/Thickness Be
100% krajowy surowiec Unicomp Microfocus źródło promieniowania rentgenowskiego do precyzyjnej kontroli
100% Domestic Raw Material Unicomp Microfocus X Ray Source Key Parameter: Max. Tube Power: 25W Max. Tube Voltage: 110kV Beam Angle: 110±3° Beam Angle: 110±3° Min. Spot Size: ≤5μm Applications: Integrated Circuit Package SMT, PCBA ,Electronic Manufacturing EV Battery IGBT Substrate / Module Specifications: Operating Tube Voltage Range 40-110 kV Operating Tube Current Range 0-250 μA Maximum Tube Power 25W Input Voltage (DC) 25±0.5V Power Consumption ＜75W Window Material
Certyfikat CE/FDA Unicomp 110KV 5μm Źródło promieniowania rentgenowskiego do sprawdzania jakości IC
CE/FDA Certificated Unicomp 110KV 5μm X Ray Source to check IC Quality Key Parameter: Max. Tube Voltage: 110kV Max. Tube Power: 25W Beam Angle: 110±3° Min. Spot Size: ≤5μm Beam Angle: 110±3° Applications: SMT, PCBA ,Electronic Manufacturing Integrated Circuit Package IGBT Substrate / Module EV Battery Specifications: Operating Tube Voltage Range 40-110 kV Operating Tube Current Range 0-250 μA Maximum Tube Power 25W Input Voltage (DC) 25±0.5V Power Consumption ＜75W Window
